MatMeas DTS1000 High-Temperature Dielectric Impedance Spectrometer | Dielectric Property Analyzer up to 800°C — 1

Overview

MatMeas DTS1000 High-Temperature Dielectric Impedance Spectrometer is a precision measurement system developed for analyzing the dielectric properties of materials under elevated temperatures.

The instrument integrates a high-temperature furnace, precision electrode system, and impedance measurement module to provide reliable dielectric constant and dielectric loss characterization over a wide temperature and frequency range.

Inspired by the thermal field design concept of modern thermal analyzers, the DTS1000 adopts a vertical furnace structure with a fixed sample holder to ensure excellent temperature stability and measurement repeatability.

This system is widely used in the research and development of ceramic materials, dielectric materials, electronic components, and advanced functional materials.

Specifications

Parameter Specification
Temperature Range Room Temperature – 800°C
Temperature Control Accuracy ±1°C
Heating Rate 0–10°C/min (Typical 3°C/min)
Frequency Range 10 Hz – 10 MHz
Heating Method Resistance Wire Heating
Electrode Material High-Purity Platinum
Sample Size Diameter ≤ 20 mm, Thickness ≤ 5 mm
Measurement Environment Air / Flowing Gas / Vacuum
Power Supply 220 V, 50–60 Hz, 1600 W
Dimensions 480 × 320 × 830 mm
Weight 46 kg
Warranty 1 Year

Applications

  1. Advanced Ceramic
    Materials Measurement of dielectric constant and loss behavior in ferroelectric ceramics, piezoelectric ceramics, and dielectric substrates.
  2. Electronic
    Materials Characterization of dielectric performance for capacitor materials, insulating materials, and semiconductor substrates.
  3. Polymer Dielectrics
    Analysis of temperature-dependent dielectric properties of polymer films and composite dielectric materials.
  4. Energy Storage
    Materials Investigation of dielectric properties in energy storage ceramics and dielectric capacitors.
  5. Functional
    Materials Research Study of temperature-dependent dielectric behavior in novel functional materials and advanced electronic materials.