High-Purity Quartz Crucible for Semiconductor & Solar Ingot Pulling — 1

Overview

The MatMeas High-Purity Quartz Crucible is engineered for precision single crystal growth applications in semiconductor wafer and solar photovoltaic manufacturing.

Constructed from premium fused silica (SiO₂ >99.99%), our crucibles offer exceptional thermal shock resistance and maintain structural integrity under extreme temperatures up to 1500°C. The low aluminum and alkali metal content minimizes contamination risks during silicon ingot pulling processes.

Available in both transparent and opaque configurations, with customizable dimensions to fit mainstream crystal pullers (CGS, Kayex, etc.). OEM/ODM services available for wholesale orders.

Specifications

Material Composition High-Purity Fused Quartz SiO₂
Purity Level >99.99% (SiO₂ content)
Aluminum Content <15 ppm
Alkali Metals (Na, K, Li) <2 ppm
Maximum Working Temperature 1500°C (short term: 1600°C)
Softening Point ~1650°C
Density 2.07-2.21 g/cm³
Thermal Expansion Coefficient 5.5 × 10⁻⁷ /°C (20-300°C)
Available Types Transparent / Opaque / Coated
Standard Dimensions 12" - 40" diameter (customizable)
Wall Thickness 5 - 15 mm (customizable)
Applications CZ Silicon Pulling, LED Sapphire, Optical Fiber
Packaging Cleanroom vacuum packaging

Applications

  1. Semiconductor Silicon Ingot
    CZ (Czochralski) method single crystal silicon growth for IC chips
  2. Solar Photovoltaic Industry
    Polysilicon ingot pulling for solar cells
  3. LED Manufacturing
    Sapphire crystal growth substrates
  4. Optical Fiber Preform
    High purity glass preform production
  5. Rare Earth Materials
    High melting point metal refining
  6. Laboratory Applications
    High temperature chemical analysis and materials research